Bonding contacts having capping layer and method for forming the same

ABSTRACT

In an example, a semiconductor device includes a first semiconductor structure including a memory array device, a second semiconductor structure including a peripheral device, and a bonding structure comprising a first bonding pad, a second bonding pad, and a remainder layer located between and in contact with the first and second bonding pad in a vertical direction. The first bonding pad is located between the remainder layer and the first semiconductor structure in the vertical direction. The second bonding pad is located between the remainder layer and the second semiconductor structure in the vertical direction. A conductive material of the remainder layer is cobalt metal different from the first and second bonding pads.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.17/100,846, filed on Nov. 21, 2020, entitled “BONDING CONTACTS HAVINGCAPPING LAYER AND METHOD FOR FORMING THE SAME,” which is a division ofU.S. application Ser. No. 16/140,476, filed on Sep. 24, 2018, entitled“BONDING CONTACTS HAVING CAPPING LAYER AND METHOD FOR FORMING THE SAME,”which is a continuation of International Application No.PCT/CN2018/100218, filed on Aug. 13, 2018, entitled “BONDING CONTACTSHAVING CAPPING LAYER AND METHOD FOR FORMING THE SAME,” all of which arehereby incorporated by reference in their entireties.

BACKGROUND

Embodiments of the present disclosure relate to bonded semiconductorstructures and fabrication methods thereof.

Planar semiconductor devices, such as memory cells, are scaled tosmaller sizes by improving process technology, circuit design,programming algorithm, and fabrication process. However, as featuresizes of the semiconductor devices approach a lower limit, planarprocess and fabrication techniques become challenging and costly. Athree-dimensional (3D) device architecture can address the densitylimitation in some planar semiconductor devices, for example, Flashmemory devices.

A 3D semiconductor device can be formed by stacking semiconductor wafersor dies and interconnecting them vertically using, for instance,through-silicon vias (TSVs) or copper-to-copper (Cu—Cu) connections, sothat the resulting structure acts as a single device to achieveperformance improvements at reduced power and smaller footprint thanconventional planar processes. Among the various techniques for stackingsemiconductor substrates, hybrid bonding is recognized as one of thepromising techniques because of its capability of forming high-densityinterconnects.

SUMMARY

Embodiments of semiconductor devices, bonded structures, and fabricationmethods thereof are disclosed herein.

In one example, a semiconductor device includes a first semiconductorstructure, a second semiconductor structure, and a bonding interfacebetween the first semiconductor structure and the second semiconductorstructure. The first semiconductor structure includes a substrate, afirst device layer disposed on the substrate, and a first bonding layerdisposed above the first device layer and including a first bondingcontact. The second semiconductor structure includes a second devicelayer, and a second bonding layer disposed below the second device layerand including a second bonding contact. The first bonding contact is incontact with the second bonding contact at the bonding interface. Atleast one of the first bonding contact and the second bonding contactincludes a capping layer at the bonding interface and having aconductive material different from a remainder of the respective firstor second bonding contact.

In another example, a bonded structure includes a first bonding layerincluding a first bonding contact and a first dielectric, a secondbonding layer including a second bonding contact and a seconddielectric, and a bonding interface between the first bonding layer andthe second bonding layer. The first bonding contact is in contact withthe second bonding contact at the bonding interface, and the firstdielectric is in contact with the second dielectric at the bondinginterface. At least one of the first bonding contact and the secondbonding contact includes a capping layer at the bonding interface andhaving a conductive material different from a remainder of therespective first or second bonding contact.

In a different example, a method for forming a semiconductor device isdisclosed. A first device layer is formed on a first substrate. A firstbonding layer including a first bonding contact is formed above thefirst device layer. A first capping layer is formed at an upper end ofthe first bonding contact. The first capping layer has a conductivematerial different from a remainder of the first bonding contact. Asecond device layer is formed on a second substrate. A second bondinglayer including a second bonding contact is formed above the seconddevice layer. The first substrate and the second substrate are bonded ina face-to-face manner, so that the first bonding contact is in contactwith the second bonding contact by the first capping layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate embodiments of the present disclosureand, together with the description, further serve to explain theprinciples of the present disclosure and to enable a person skilled inthe pertinent art to make and use the present disclosure.

FIG. 1 illustrates a cross-section of an exemplary semiconductor deviceincluding bonding contacts having a capping layer, according to someembodiments of the present disclosure.

FIGS. 2A-2C illustrate cross-sections of various exemplary bondedstructures having a capping layer, according to various embodiments ofthe present disclosure.

FIGS. 3A-3D illustrate an exemplary fabrication process for forming afirst semiconductor structure including bonding contacts having acapping layer, according to some embodiments of the present disclosure.

FIGS. 4A-4D illustrate an exemplary fabrication process for forming asecond semiconductor structure including bonding contacts having acapping layer, according to some embodiments of the present disclosure.

FIGS. 5A-5B illustrate an exemplary fabrication process for bonding thefirst semiconductor structure and the second semiconductor structure,according to some embodiments of the present disclosure.

FIG. 6 is a flowchart of a method for forming an exemplary semiconductordevice including bonding contacts having a capping layer, according tosome embodiments of the present disclosure.

FIG. 7 illustrates an exemplary fabrication process for forming aselective chemical vapor deposition (CVD) cobalt (Co) capping layer forhybrid bonding, according to some embodiments of the present disclosure.

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to effect such feature, structure orcharacteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” may be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as a glass, aplastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend horizontally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layer thereupon, thereabove,and/or therebelow. A layer can include multiple layers. For example, aninterconnect layer can include one or more conductor and contact layers(in which interconnect lines and/or via contacts are formed) and one ormore dielectric layers.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess operation, set during the design phase of a product or aprocess, together with a range of values above and/or below the desiredvalue. The range of values can be due to slight variations inmanufacturing processes or tolerances. As used herein, the term “about”indicates the value of a given quantity that can vary based on aparticular technology node associated with the subject semiconductordevice. Based on the particular technology node, the term “about” canindicate a value of a given quantity that varies within, for example,10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

As used herein, the term “3D memory device” refers to a semiconductordevice with vertically oriented strings of memory cell transistors(referred to herein as “memory strings,” such as NAND memory strings) ona laterally-oriented substrate so that the memory strings extend in thevertical direction with respect to the substrate. As used herein, theterm “vertical/vertically” means nominally perpendicular to the lateralsurface of a substrate.

In the high density, low feature size (e.g., 100 nm) hybrid bondingprocess, metals of bonding contacts in the two semiconductor structuresused as the conductor layer include copper. Copper migration, however,can happen during the hybrid bonding process due to thermal expansionand thus, can lead to void formation in the bonding contacts afterbonding. Moreover, diffusion of copper at the bonding interface isanother problem for hybrid bonding, which can cause leakage and shortenelectromigration (EM) life of the bonded structure.

Various embodiments in accordance with the present disclosure providebonding contacts having a capping layer for improving hybrid bondingprocess interface. The capping layer can prevent copper diffusionthrough the bonding interface, thereby reducing leakage and increasingEM life of the bonded structure. Moreover, by reducing volume change,the capping layer can reduce the voids formed after hybrid bonding dueto copper migration and volume shrink. For example, the capping layercan fill in the recess of a bonding contact caused by dishing at thebonding interface after chemical mechanical polishing (CMP). In someembodiments, by using a conductive material (e.g., cobalt) with a highselectivity between bonding contact the surrounding dielectric, thecapping layer can be selectively deposited only at the upper end of thebonding contact, which simplifies the fabrication process of the cappinglayer.

FIG. 1 illustrates a cross-section of an exemplary semiconductor device100 including bonding contacts 148 having a capping layer 101, accordingto some embodiments of the present disclosure. For ease of description,semiconductor device 100 will be described as a non-monolithic 3D memorydevice. However, it is understood that semiconductor device 100 is notlimited to a 3D memory device and can include any suitable semiconductordevices that can use capping layer(s) to improve bonding interfaceproperties as described below in detail.

Semiconductor device 100 represents an example of a non-monolithic 3Dmemory device. The term “non-monolithic” means that the components ofsemiconductor device 100 (e.g., peripheral devices and memory arraydevices) can be formed separately on different substrates and thenbonded to form a bonded semiconductor device. Semiconductor device 100can include a substrate 102, which can include silicon (e.g., singlecrystalline silicon), silicon germanium (SiGe), gallium arsenide (GaAs),germanium (Ge), silicon on insulator (SOI), or any other suitablematerials.

Semiconductor device 100 can include a peripheral device layer 103 onsubstrate 102. Peripheral device layer 103 can include a plurality oftransistors 104 formed on substrate 102. Transistors 104 can be formed“on” substrate 102, where the entirety or part of each transistor 104 isformed in substrate 102 (e.g., below the top surface of substrate 102)and/or directly on substrate 102. Isolation regions (e.g., shallowtrench isolations (STIs), not shown) and doped regions (e.g., sourceregions and drain regions of transistors 104, not shown) can be formedin substrate 102 as well.

In some embodiments, peripheral device layer 103 can include anysuitable digital, analog, and/or mixed-signal peripheral circuits usedfor facilitating the operation of semiconductor device 100. For example,peripheral device layer 103 can include one or more of a page buffer, adecoder (e.g., a row decoder and a column decoder), a sense amplifier, adriver, a charge pump, a current or voltage reference, or any active orpassive components of the circuits (e.g., transistors, diodes,resistors, or capacitors). In some embodiments, peripheral device layer103 is formed on substrate 102 using complementarymetal-oxide-semiconductor (CMOS) technology (also known as a “CMOSchip”).

Semiconductor device 100 can include an interconnect layer 106 (referredto herein as a “peripheral interconnect layer”) above peripheral devicelayer 103 to transfer electrical signals to and from peripheral devicelayer 103. Peripheral interconnect layer 106 can include a plurality ofinterconnects (also referred to herein as “contacts”), including lateralinterconnect lines 108 and vertical interconnect access (via) contacts110. As used herein, the term “interconnects” can broadly include anysuitable types of interconnects, such as middle-end-of-line (MEOL)interconnects and back-end-of-line (BEOL) interconnects. Peripheralinterconnect layer 106 can further include one or more interlayerdielectric (ILD) layers (also known as “intermetal dielectric (IMD)layers”) in which interconnect lines 108 and via contacts 110 can form.That is, peripheral interconnect layer 106 can include interconnectlines 108 and via contacts 110 in multiple ILD layers. Interconnectlines 108 and via contacts 110 in peripheral interconnect layer 106 caninclude conductive materials including, but not limited to, tungsten(W), cobalt (Co), copper (Cu), aluminum (Al), silicides, or anycombination thereof. The ILD layers in peripheral interconnect layer 106can include dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low dielectric constant(low-k) dielectrics, or any combination thereof.

In some embodiments, peripheral interconnect layer 106 further includesa bonding layer 111 at its top portion. Bonding layer 111 can include aplurality of bonding contacts 112 and a dielectric 113 electricallyisolating bonding contacts 112. Bonding contacts 112 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. The remaining area of bondinglayer 111 can be formed with dielectric 113 including, but not limitedto, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof. Bonding contacts 112 anddielectric 113 in bonding layer 111 can be used for hybrid bonding asdescribed below in detail.

Semiconductor device 100 can include a memory array device layer 120above peripheral device layer 103. It is noted that x and y axes areincluded in FIG. 1 to further illustrate the spatial relationship of thecomponents in semiconductor device 100. Substrate 102 includes twolateral surfaces (e.g., a top surface and a bottom surface) extendinglaterally in the x-direction (i.e., the lateral or width direction). Asused herein, whether one component (e.g., a layer or a device) is “on,”“above,” or “below” another component (e.g., a layer or a device) of asemiconductor device (e.g., semiconductor device 100) is determinedrelative to the substrate of the semiconductor device (e.g., substrate102) in the y-direction (i.e., the vertical or thickness direction) whenthe substrate is positioned in the lowest plane of the semiconductordevice in the y-direction. The same notion for describing spatialrelationship is applied throughout the present disclosure.

In some embodiments, semiconductor device 100 is a NAND Flash memorydevice in which memory cells are provided in the form of an array ofNAND memory strings 114 each extending vertically above peripheraldevice layer 103. Memory array device layer 120 can include NAND memorystrings 114 that extend vertically through a plurality of pairs eachincluding a conductor layer 116 and a dielectric layer 118 (referred toherein as “conductor/dielectric layer pairs”). The stackedconductor/dielectric layer pairs are also referred to herein as a“memory stack.” Conductor layers 116 and dielectric layers 118 in thememory can stack alternate in the vertical direction.

As shown in FIG. 1 , each NAND memory string 114 can include asemiconductor channel 124 and a dielectric layer (also known as a“memory film”). In some embodiments, semiconductor channel 124 includessilicon, such as amorphous silicon, polysilicon, or single crystallinesilicon. In some embodiments, the memory film is a composite layerincluding a tunneling layer 126, a storage layer 128 (also known as a“charge trap/storage layer”), and a blocking layer (not shown). EachNAND memory string 114 can have a cylinder shape (e.g., a pillar shape).Semiconductor channel 124, tunneling layer 126, storage layer 128, andthe blocking layer are arranged radially from the center toward theouter surface of the pillar in this order, according to someembodiments. Tunneling layer 126 can include silicon oxide, siliconoxynitride, or any combination thereof. Storage layer 128 can includesilicon nitride, silicon oxynitride, silicon, or any combinationthereof. The blocking layer can include silicon oxide, siliconoxynitride, high dielectric constant (high-k) dielectrics, or anycombination thereof.

In some embodiments, NAND memory strings 114 further include a pluralityof control gates (each being part of a word line). Each conductor layer116 in the memory stack can act as a control gate for memory cell ofeach NAND memory string 114. Each NAND memory string 114 can include asource select gate at its upper end and a drain select gate at its lowerend. As used herein, the “upper end” of a component (e.g., NAND memorystring 114) is the end farther away from substrate 102 in they-direction, and the “lower end” of the component (e.g., NAND memorystring 114) is the end closer to substrate 102 in the y-direction.

In some embodiments, semiconductor device 100 further includes asemiconductor layer 130 disposed above and in contact with NAND memorystrings 114. Memory array device layer 120 can be disposed belowsemiconductor layer 130. In some embodiments, semiconductor layer 130includes a plurality of semiconductor plugs 132 electrically separatedby isolation regions. In some embodiments, each semiconductor plug 132is disposed at the upper end of corresponding NAND memory string 114 andfunctions as the drain of corresponding NAND memory string 114 and thus,can be considered as part of corresponding NAND memory string 114.Semiconductor plug 132 can include a single crystalline silicon.Semiconductor plug 132 can be un-doped, partially doped (in thethickness direction and/or the width direction), or fully doped byp-type or n-type dopants.

In some embodiments, semiconductor device 100 includes localinterconnects that are formed in one or more ILD layers and in contactwith components in memory array device layer 120, such as the word lines(e.g., conductor layers 116) and NAND memory strings 114. The localinterconnects can include word line via contacts 136, source line viacontacts 138, and bit line via contacts 140. Each local interconnect caninclude conductive materials including, but not limited to, W, Co, Cu,Al, silicides, or any combination thereof. Word line via contacts 136can extend vertically through one or more ILD layers. Each word line viacontact 136 can be in contact with corresponding conductor layer 116 toindividually address a corresponding word line of semiconductor device100. Each source line via contact 138 can be in contact with the sourceof corresponding NAND memory string 114. Bit line via contacts 140 canextend vertically through one or more ILD layers. Each bit line viacontact 140 can electrically connect to corresponding semiconductor plug132 (e.g., the drain) of NAND memory string 114 to individually addresscorresponding NAND memory string 114.

Similar to peripheral device layer 103, memory array device layer 120 ofsemiconductor device 100 can also include interconnect layers fortransferring electrical signals to and from NAND memory strings 114. Asshown in FIG. 1 , semiconductor device 100 can include an interconnectlayer 142 (referred to herein as an “array interconnect layer”) belowmemory array device layer 120. Array interconnect layer 142 can includea plurality of interconnects, including interconnect lines 144 and viacontacts 146 in one or more ILD layers. In some embodiments, arrayinterconnect layer 142 includes a bonding layer 147 at its bottomportion. Bonding layer 147 can include a plurality of bonding contacts148 and a dielectric 149 electrically isolating bonding contacts 148.Bonding contacts 148 can include conductive materials including, but notlimited to, W, Co, Cu, Al, silicides, or any combination thereof. Theremaining area of bonding layer 147 can be formed with dielectric 149including, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, low-k dielectrics, or any combination thereof. Bondingcontacts 148 and dielectric 149 in bonding layer 147 can be used forhybrid bonding as described below in detail.

As shown in FIG. 1 , another interconnect layer 150 (referred to hereinas a “BEOL interconnect layer”) can be disposed above memory arraydevice layer 120 and can include interconnects, such as interconnectlines 152 and via contacts 154 in one or more ILD layers. BEOLinterconnect layer 150 can further include contact pads 156 and aredistribution layer (not shown) at the top portion of semiconductordevice 100 for wire bonding and/or bonding with an interposer. BEOLinterconnect layer 150 and array interconnect layer 142 can be formed onopposite sides of memory array device layer 120. In some embodiments,interconnect lines 152, via contacts 154, and contact pads 156 in BEOLinterconnect layer 150 can transfer electrical signals betweensemiconductor device 100 and external circuits.

In some embodiments, a first semiconductor structure (e.g., a memoryarray device chip 160), including memory array device layer 120 (andNAND memory strings 114 therein), semiconductor layer 130 (e.g., athinned substrate), array interconnect layer 142 (and bonding layer 147therein), and BEOL interconnect layer 150, is bonded with a secondsemiconductor structure (e.g., a peripheral device chip 162), includingsubstrate 102, peripheral device layer 103 (and transistors 104therein), and peripheral interconnect layer 106, in a face-to-facemanner at a bonding interface 158.

As shown in FIG. 1 , bonding interface 158 can be formed between bondinglayers 111 and 147. Bonding contacts 112 are in contact with bondingcontacts 148 at bonding interface 158, and dielectric 113 is in contactwith dielectric 149 as well, according to some embodiments. Insemiconductor device 100, bonding interface 158 is disposed betweenmemory array device layer 120 and peripheral device layer 103, accordingto some embodiments. Bonding layers 111 and 147 can be bonded usinghybrid bonding (also known as “metal/dielectric hybrid bonding”), whichis a direct bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal bonding and dielectric-dielectric bondingsimultaneously. The metal-metal bonding can be formed between bondingcontacts 148 and bonding contacts 112, and the dielectric-dielectricbonding can be formed between dielectric 149 and dielectric 113.

As shown in FIG. 1 , the width (in the x-direction) of bonding contact148 in memory array device chip 160 is greater than the width (in thex-direction) of bonding contact 112 in peripheral device chip 162. Eachbonding contact 148 can include capping layer 101 formed at its end atbonding interface 158. The width of capping layer 101 can be nominallythe same as the width of bonding contact 148 at bonding interface 158.That is, capping layer 101 can extend laterally to cover the entirewidth of bonding contact 148 at bonding interface 158, while notextending into dielectric 149 in memory array device chip 160 at bondinginterface 158. Because bonding contact 148 is wider than bonding contact112, by covering the entire width of bonding contact 148 at bondinginterface 158, capping layer 101 can completely seal both bondingcontact 148 and bonding contact 112 on the opposite sides of bondinginterface 158 to prevent copper diffusion from bonding contact 148 todielectric 113 across bonding interface 158, as well as void formationcaused by thermal expansion in dual directions (i.e., bottom up and topdown). On the other hand, the selectivity of the conductive material ofcapping layer 101 can be greater on the remainder of bonding contact 148than on dielectric 149. As a result, capping layer 101 can beselectively deposited only at the end of bonding contact 148, but notdielectric 149, at bonding interface 158 without the need of patterning,thereby reducing the process complexity and associated cost.

The thickness (in the y-direction) of capping layer 101 can be betweenabout 1 nm and about 5 nm, such as between 1 nm and 5 nm (e.g., 1 nm,1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, any rangebounded by the lower end by any of these values, or in any range definedby any two of these values). In some embodiments, capping layer 101 hasa conductive material different from the remainder of bonding contact148. The remainder of bonding contact 148 can include a conductor (notshown) and a barrier/adhesion layer (not shown) between the conductorand dielectric 149 surrounding bonding contact 148. The barrier/adhesionlayer can improve the adhesion of the conductor on dielectric 149 andprevent the diffusion of the conductor atoms into dielectric 149. Insome embodiments, the materials of the barrier/adhesion layer include,but not limited to, titanium/titanium nitride (Ti/TiN) andtantalum/tantalum nitride (Ta/TaN). In some embodiments, the conductivematerials of the conductor include, but not limited to metals, such asW, Co, Cu, and Al.

In some embodiments, bonding contact 148 includes copper as itsconductor, which is suitable for hybrid bonding, and capping layer 101includes cobalt that is different from the copper conductor. Cobalt canact as a barrier between the copper conductor and dielectrics toeffectively prevent copper diffusion into the dielectrics. Also, theselectivity of cobalt on copper is greater than on dielectric materials(e.g., silicon oxide), for example, by 10 times to 1,000 times (e.g., 10times, 20 times, 30 times, 40 times, 50 times, 60 times, 70 times, 80times, 90 times, 100 times, 200 times, 300 times, 400 times, 500 times,600 times, 700 times, 800 times, 900 times, 1,000 times, any rangebounded by the lower end by any of these values, or in any range definedby any two of these values). Moreover, the deposition of cobalt incapping layer 101 can be controlled to precisely fill in the dishing atthe upper end of bonding contact 148 after CMP (e.g., with the thicknessof between 1 nm and 5 nm), such that the surface of bonding contact 148can be flush with other parts in bonding layer 111. Accordingly, cappinglayer 101 of bonding contact 148 can improve various properties atbonding interface 158 of semiconductor device 100.

FIGS. 2A-2C illustrate cross-sections of various exemplary bondedstructures having a capping layer, according to various embodiments.FIG. 1 illustrates semiconductor device 100 having capping layer 101,which includes a bonded structure of memory array device chip 160 andperipheral device chip 162. It is understood that the capping layerdisclosed herein can be used in any suitable bonded structures withvarious arrangements. FIG. 2A illustrates a bonded structure 201including a lower bonding layer 204 and an upper bonding layer 206,according to some embodiments. Lower bonding layer 204 can include lowerbonding contacts 208 and lower dielectrics 210 electrically isolatinglower bonding contacts 208. Similarly, upper bonding layer 206 caninclude upper bonding contacts 212 and upper dielectrics 214electrically isolating upper bonding contacts 212. Bonded structure 201can further include a bonding interface 216 formed between lower bondinglayer 204 and upper bonding layer 206.

As shown in FIG. 2A, each upper bonding contact 212 is in contact withcorresponding lower bonding contact 208, and upper dielectric 214 is incontact with lower dielectric 210. In some embodiments, upper bondingcontact 212 and lower bonding contact 208 include a copper conductor,and upper dielectric 214 and lower dielectric 210 include silicon oxide.Upper bonding layer 206 can be bonded with lower bonding layer 204 byhybrid bonding, so that Cu—Cu fusion bonding between upper bondingcontact 212 and lower bonding contact 208 and SiOx-SiOx covalent bondingbetween upper dielectric 214 and lower dielectric 210 can be formedsimultaneously.

Similar to the bonded structure in FIG. 1 , the width of upper bondingcontact 212 is greater than the width of lower bonding contact 208. Eachupper bonding contact 212 can include a capping layer 218 formed at oneend at bonding interface 216. The width of capping layer 218 can benominally the same as the width of upper bonding contact 212 at bondinginterface 216. The thickness of capping layer 218 can be between about 1nm and about 5 nm, such as between 1 nm and 5 nm (e.g., 1 nm, 1.5 nm, 2nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, any range bounded by thelower end by any of these values, or in any range defined by any two ofthese values). In some embodiments, capping layer 218 has a conductivematerial different from the remainder of upper bonding contact 212. Insome embodiments, the selectivity of the conductive material of cappinglayer 218 is greater on the remainder of upper bonding contact 212 thanon upper dielectric 214. In one example, upper bonding contact 212includes a copper conductor, and capping layer 218 includes cobalt.

FIG. 2B illustrates a bonded structure 203 that is similar to bondedstructure 201 illustrated in FIG. 2A except that the relative verticalpositions of the components in the upper and lower bonding layers 206and 204 are switched. In other words, bonded structure 201 can beflipped vertically along bonding interface 216 to become bondedstructure 203. Nevertheless, capping layer 218 can still be formed atone end of the wider bonding contact (e.g., bonding contact 212) atbonding interface 216 regardless of whether the wider bonding contact isabove or below bonding interface 216.

FIG. 2C illustrates a bonded structure 205 that is similar to bondedstructure 201 illustrated in FIG. 2A except that each lower bondingcontact 208 in lower bonding layer 204 includes a capping layer 220 aswell. That is, both upper bonding contact 212 and lower bonding contact208 include capping layers 218 and 220 at the respective end at bondinginterface 216. In some embodiments, similar to capping layer 218, thewidth of capping layer 220 is nominally the same as the width of lowerbonding contact 208 at bonding interface 216. In some embodiments, theconductive materials of both capping layers 218 and 220 are the same,such as cobalt. In some embodiments, the thickness of both cappinglayers 218 and 220 are substantially the same, such as between 1 nm and5 nm. It is understood that in some embodiments, the thickness ofcapping layers 218 and 220 are different from one another. By havingdual capping layers on the opposite sides of the bonding interface, thebonding interface properties, such as copper diffusion prevention, voidformation reduction, and dishing filling, can be further improved.

It is understood that bonded structure 201, 203, or 205 can include orbe combined with other structures, such as device layer(s), interconnectlayer(s), and substrate(s), to form any suitable semiconductor devices,for example, logic devices, volatile memory devices (e.g., dynamicrandom-access memory (DRAM) and static random-access memory (SRAM)), andnon-volatile memory devices (e.g., Flash memory), in a 2D, 2.5D, or 3Darchitecture. In a word, the bonding structure is suitable for bondingbetween various semiconductor devices known to those skilled in the art,such as contact image sensor (CIS), DRAM and CMOS, and direct bondingbetween any logic devices and any memory devices.

FIGS. 3A-3D illustrate an exemplary fabrication process for forming afirst semiconductor structure including bonding contacts having acapping layer, according to some embodiments. FIGS. 4A-4D illustrate anexemplary fabrication process for forming a second semiconductorstructure including bonding contacts having a capping layer, accordingto some embodiments. FIGS. 5A-5B illustrate an exemplary fabricationprocess for bonding the first semiconductor structure and the secondsemiconductor structure, according to some embodiments. FIG. 6 is aflowchart of a method 600 for forming an exemplary semiconductor deviceincluding bonding contacts having a capping layer, according to someembodiments. Examples of the semiconductor device depicted in FIGS. 3-6include semiconductor device 100 depicted in FIG. 1 . FIGS. 3-6 will bedescribed together. It is understood that the operations shown in method600 are not exhaustive and that other operations can be performed aswell before, after, or between any of the illustrated operations.Further, some of the operations may be performed simultaneously, or in adifferent order than shown in FIGS. 3-6 .

Referring to FIG. 6 , method 600 starts at operation 602, in which afirst device layer is formed on a first substrate. The first substratecan be a silicon substrate. As illustrated in FIG. 3A, a device layer304 is formed above a silicon substrate 302. Device layer 304 can be amemory array device layer including a plurality of NAND memory strings(not shown) each extending vertically through a memory stack (not shown)formed on silicon substrate 302.

To form the memory stack, a dielectric stack including an alternatingstack of sacrificial layers (e.g., silicon nitride) and dielectriclayers (e.g., silicon oxide) can be formed on silicon substrate 302 byone or more thin film deposition processes including, but not limitedto, CVD, physical vapor deposition (PVD), atomic layer deposition (ALD),or any combination thereof. The memory stack then can be formed onsilicon substrate 302 by gate replacement processes, i.e., replacing thesacrificial layers in the dielectric stack with conductor layers. Insome embodiments, fabrication processes to form the NAND memory stringsinclude forming a semiconductor channel that extends vertically throughthe dielectric stack, forming a composite dielectric layer (memory film)between the semiconductor channel and the dielectric stack, including,but not limited to, a tunneling layer, a storage layer, and a blockinglayer. The semiconductor channel and the memory film can be formed byone or more thin film deposition processes such as ALD, CVD, PVD, anyother suitable processes, or any combination thereof.

As illustrated in FIG. 3A, an array interconnect layer 306 can be formedabove memory array device layer 304. Array interconnect layer 306 caninclude interconnects (not shown), including interconnect lines and viacontacts in a plurality of ILD layers, to make electrical connectionswith memory array device layer 304. In some embodiments, arrayinterconnect layer 306 includes multiple ILD layers and interconnectstherein formed by multiple processes. For example, the interconnects caninclude conductive materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD,electrochemical depositions, or any combination thereof. The ILD layerscan include dielectric materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof.

Method 600 proceeds to operation 604, as illustrated in FIG. 6 , inwhich a first bonding layer including a first bonding contact is formedabove the first device layer. A first dielectric can be formed in thefirst bonding layer as well. As illustrated in FIG. 3B, a dielectric 308is deposited on the top surface of array interconnect layer 306 by oneor more thin film deposition processes including, but not limited to,CVD, PVD, ALD, or any combination thereof. As illustrated in FIG. 3C,bonding contacts 310 are formed in dielectric 308 to form a bondinglayer 312 above array interconnect layer 306 and memory array devicelayer 304. Bonding contact 310 can be formed in multiple processes. Forexample, bonding contact 310 can include a barrier/adhesion layer and aconductor deposited subsequently in this order by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD,electrochemical depositions, or any combination thereof. Fabricationprocesses to form bonding contact 310 can also include photolithography,CMP, wet/dry etch, or any other suitable processes, to pattern and etchan opening (e.g., a via hole and/or a trench) in which thebarrier/adhesion layer and conductor can be deposited.

Method 600 proceeds to operation 606, as illustrated in FIG. 6 , inwhich a first capping layer is formed at an upper end of the firstbonding contact. The first capping layer can have a conductive materialdifferent from the remainder of the first bonding contact. Forming thefirst capping layer can include etching a recess at the upper end of thefirst bonding contact, and selectively depositing the conductivematerial in the recess. In some embodiments, the conductive material ofthe first capping layer includes cobalt, and the remainder of the firstbonding contact includes copper. In some embodiments, the thickness ofthe first capping layer is formed between about 1 nm and about 5 nm.

As illustrated in FIG. 3D, a capping layer 314 is formed at the upperend of bonding contact 310 in bonding layer 312. The width of cappinglayer 314 is nominally the same as the width of bonding contact 310 onits top surface, according to some embodiments. To form capping layer314, a recess can be etched by wet/dry etching and/or CMP and filled byselectively depositing a conductive material in the recess using one ormore thin film deposition processes including, but not limited to, CVD,PVD, ALD, electrochemical depositions, or any combination thereof. Insome embodiments, the selectivity of the conductive material of cappinglayer 314 is greater on the remainder of bonding contact 310 than ondielectric 308, such that the conductive material is deposited only inthe recess exposing the conductor of bonding contact 310, but not ondielectric 308.

FIG. 7 illustrates an exemplary fabrication process 700 for forming aselective CVD cobalt capping layer 711 for hybrid bonding, according tosome embodiments. Capping layer 711 can be one example of capping layer314 in FIG. 3D, and fabrication process 700 can be one example ofoperation 606 in FIG. 6 . A bonding contact 701 can include a copperconductor 703 and a barrier/adhesion layer 705 (e.g., including Ta/TaNor Ti/TiN) along the sidewalls and the bottom surface of copperconductor 703. In some embodiments, copper conductor 703 can be formedusing a damascene process, which involves a copper CMP process 702 toplanarize the top surface of bonding contact 701. Copper CMP process 702can create dishing at the upper end of bonding contact 701, and the topsurface of copper conductor 703 can be oxidized thereby forming a copperoxide layer 707 when exposed in the air. That is, the top surface ofcopper conductor 703 can be below the top surface of barrier/adhesionlayer 705, leaving a space for forming capping layer 711, as shown inFIG. 7 .

A surface preparation process 704 can then be performed to remove copperoxide layer 707, for example, by applying thermal annealing and/orplasma treatment to the top surface of bonding contact 701. As shown inFIG. 7 , a recess 709 can be etched at the upper end of copper conductor703 by copper CMP process 702 (to form the dishing) and/or surfacepreparation process 704 (to remove copper oxide layer 707, i.e., oxideremoval).

A cobalt deposition process 706 in conjunction with a post-treatmentprocess 708 can then be performed to selectively deposit cobalt cappinglayer 711 to fill in recess 709, e.g., only on the top surface of copperconductor 703. In some embodiments, cobalt precursors (e.g.,bis(cyclopentadienyl)cobalt(II), bis(ethylcyclopentadienyl)cobalt(II),and bis(pentamethylcyclopentadienyl)cobalt(II)) and reaction gases areused for thermal CVD to selectively deposit cobalt on copper conductor703 followed by plasma treatment (e.g., using ammonia (NH₃)) to removeresidual carbon to further improve the selectivity of cobalt deposition.The cycle of cobalt deposition process 706 followed by post-treatmentprocess 708 can be repeated until resulting cobalt capping layer 711fills in recess 709, making the top surface of bonding contact 701 flat.That is, the thickness of cobalt capping layer 711 can be nominally thesame as the depth of recess 709.

Referring back to FIG. 6 , method 600 further includes operation 608, inwhich a second device layer is formed above a second substrate. Thesecond substrate can be a silicon substrate. As illustrated in FIG. 4A,a device layer 404 is formed on a silicon substrate 402. Device layer404 can be a peripheral device layer including a plurality oftransistors (not shown) formed on silicon substrate 402 by a pluralityof processes including, but not limited to, photolithography, dry/wetetch, thin film deposition, thermal growth, implantation, CMP, and anyother suitable processes.

As illustrated in FIG. 4A, a peripheral interconnect layer 406 can beformed above peripheral device layer 404. Peripheral interconnect layer406 can include interconnects (not shown), including interconnect linesand via contacts in a plurality of ILD layers, to make electricalconnections with peripheral device layer 404. In some embodiments,peripheral interconnect layer 406 includes multiple ILD layers andinterconnects therein formed by multiple processes. For example, theinterconnects can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electrochemical depositions, or any combination thereof. The ILDlayers can include dielectric materials deposited by one or more thinfilm deposition processes including, but not limited to, CVD, PVD, ALD,or any combination thereof.

Method 600 proceeds to operation 610, as illustrated in FIG. 6 , inwhich a second bonding layer including a second bonding contact isformed above the second device layer. A second dielectric can be formedin the second bonding layer as well. In some embodiments, the width ofthe first bonding contact at its upper end, which is nominally the sameas the width of the first capping layer, is greater than the width ofthe second bonding contact at its upper end. Thus, a second cappinglayer may not need to be formed at the upper end of the second bondingcontact. Additionally or optionally, a second capping layer can beformed at the upper end of the second bonding contact to further enhancethe bonding interface properties as described above in detail. Thesecond capping layer can have a conductive material different from theremainder of the second bonding contact. The width of the first cappinglayer can be greater than the width of the second capping layer.

As illustrated in FIG. 4B, a dielectric 408 is deposited on the topsurface of peripheral interconnect layer 406 by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. As illustrated in FIG. 4C, bonding contacts 410are formed in dielectric 408 to form a bonding layer 412 aboveperipheral interconnect layer 406 and peripheral device layer 404.Bonding contacts 410 can be formed in multiple processes. For example,each bonding contact 410 can include a barrier/adhesion layer and aconductor deposited subsequently in this order by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD,electrochemical depositions, or any combination thereof. Fabricationprocesses to form bonding contacts 410 can also includephotolithography, CMP, wet/dry etch, or any other suitable processes, topattern and etch an opening (e.g., a via hole and/or a trench) in whichthe barrier/adhesion layer and conductor can be deposited.

As illustrated in FIG. 4D, a capping layer 414 is formed at the upperend of bonding contact 410 in bonding layer 412. The width of cappinglayer 414 is nominally the same as the width of bonding contact 410 onits top surface, according to some embodiments. The width of cappinglayer 314 can be greater than the width of capping layer 414. To formcapping layer 414, a recess can be etched by wet/dry etching and/or CMPand filled by selectively depositing a conductive material in the recessusing one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, electrochemical depositions, or anycombination thereof. In some embodiments, the selectivity of theconductive material of capping layer 414 is greater on the remainder ofbonding contact 410 than on dielectric 408, such that the conductivematerial is deposited only in the recess exposing the conductor ofbonding contact 410, but not on dielectric 408. In some embodiments,capping layer 414 is formed by fabrication process 700 illustrated abovein detail with respect to FIG. 7 .

Method 600 proceeds to operation 612, as illustrated in FIG. 6 , inwhich the first substrate and the second substrate are bonded in aface-to-face manner, so that the first bonding contact is in contactwith the second bonding contact by the first capping layer. The firstdielectric can be in contact with the second dielectric as well afterthe bonding. In some embodiments in which the second capping layer isformed at the upper end of the second bonding contact, the first bondingcontact is in contact with the second bonding contact by the firstcapping layer and the second capping layer after the bonding. Thebonding can be hybrid bonding.

As illustrated in FIG. 5A, silicon substrate 302 and memory array devicelayer 304 formed thereon are flipped upside down. Bonding layer 312facing down is to be bonded with bonding layer 412 facing up, i.e., in aface-to-face manner. In some embodiments, bonding contacts 410 arealigned with bonding contacts 310 prior to hybrid bonding, so thatbonding contacts 410 are in contact with bonding contacts 310 by cappinglayers 314 and 414 after the hybrid bonding, according to someembodiments. In some embodiments, a treatment process, e.g., a plasmatreatment, a wet treatment, and/or a thermal treatment, is applied tothe bonding surfaces prior to the hybrid bonding. As a result of thehybrid bonding, bonding contacts 410 (e.g., capping layers 414 thereof)can be inter-mixed with bonding contacts 310 (e.g., capping layer 314thereof), and dielectric 408 can be covalent-bonded with dielectric 308,thereby forming a bonding interface 502 between bonding layer 412 andbonding layer 312, as shown in FIG. 5B.

It is understood that although memory array device layer 304 is flippedupside down and is above peripheral device layer 404 in the resultingsemiconductor device as shown in FIG. 5B, in some embodiments,peripheral device layer 404 is flipped upside down and is above memoryarray device layer 304 in the resulting semiconductor device. It isfurther understood that although device layer 304 is illustrated as amemory array device layer and device layer 404 is illustrated as aperipheral device layer, the examples are for illustrative purposes onlyand do not limit the embodiments of present disclosure. In one example,device layer 304 can be a peripheral device layer, and device layer 404can be a memory array device layer. In another example, device layers304 and 404 can both be peripheral device layers. In still anotherexample, device layers 304 and 404 can both be memory array devicelayers.

According to one aspect of the present disclosure, a semiconductordevice includes a first semiconductor structure, a second semiconductorstructure, and a bonding interface between the first semiconductorstructure and the second semiconductor structure. The firstsemiconductor structure includes a substrate, a first device layerdisposed on the substrate, and a first bonding layer disposed above thefirst device layer and including a first bonding contact. The secondsemiconductor structure includes a second device layer, and a secondbonding layer disposed below the second device layer and including asecond bonding contact. The first bonding contact is in contact with thesecond bonding contact at the bonding interface. At least one of thefirst bonding contact and the second bonding contact includes a cappinglayer at the bonding interface and having a conductive materialdifferent from a remainder of the respective first or second bondingcontact.

In some embodiments, the conductive material of the capping layerincludes cobalt, and the remainder of the respective first or secondbonding contact includes copper. In some embodiments, a thickness of thecapping layer is between about 1 nm and about 5 nm. In some embodiments,a selectivity of the conductive material of the capping layer is greateron the remainder of the respective first or second bonding contact thanon the first or second dielectric.

In some embodiments, a width of the second bonding contact is greaterthan a width of the first bonding contact at the bonding interface, andthe second bonding contact includes the capping layer. A width of thecapping layer can be nominally the same as the width of the secondbonding contact at the bonding interface. In some embodiments, a widthof the first bonding contact is greater than a width of the secondbonding contact at the bonding interface, and the first bonding contactincludes the capping layer. A width of the capping layer can nominallythe same as the width of the first bonding contact at the bondinginterface. In some embodiments, each of the first and second bondingcontacts includes the respective capping layer.

In some embodiments, the first bonding layer further includes a firstdielectric, and the second bonding layer further includes a seconddielectric in contact with the first dielectric at the bondinginterface.

In some embodiments, one of the first device layer and the second devicelayer includes a NAND memory string, and another one of the first devicelayer and the second device layer includes a peripheral device.

According to another aspect of the present disclosure, a bondedstructure includes a first bonding layer including a first bondingcontact and a first dielectric, a second bonding layer including asecond bonding contact and a second dielectric, and a bonding interfacebetween the first bonding layer and the second bonding layer. The firstbonding contact is in contact with the second bonding contact at thebonding interface, and the first dielectric is in contact with thesecond dielectric at the bonding interface. At least one of the firstbonding contact and the second bonding contact includes a capping layerat the bonding interface and having a conductive material different froma remainder of the respective first or second bonding contact.

In some embodiments, the conductive material of the capping layerincludes cobalt, and the remainder of the respective first or secondbonding contact includes copper. In some embodiments, a thickness of thecapping layer is between about 1 nm and about 5 nm. In some embodiments,a selectivity of the conductive material of the capping layer is greateron the remainder of the respective first or second bonding contact thanon the first or second dielectric.

In some embodiments, a width of the second bonding contact is greaterthan a width of the first bonding contact at the bonding interface, andthe second bonding contact includes the capping layer. A width of thecapping layer can be nominally the same as the width of the secondbonding contact at the bonding interface. In some embodiments, a widthof the first bonding contact is greater than a width of the secondbonding contact at the bonding interface, and the first bonding contactincludes the capping layer. A width of the capping layer can nominallythe same as the width of the first bonding contact at the bondinginterface. In some embodiments, each of the first and second bondingcontacts includes the respective capping layer.

According to still another aspect of the present disclosure, a methodfor forming a semiconductor device is disclosed. A first device layer isformed on a first substrate. A first bonding layer including a firstbonding contact is formed above the first device layer. A first cappinglayer is formed at an upper end of the first bonding contact. The firstcapping layer has a conductive material different from a remainder ofthe first bonding contact. A second device layer is formed on a secondsubstrate. A second bonding layer including a second bonding contact isformed above the second device layer. The first substrate and the secondsubstrate are bonded in a face-to-face manner, so that the first bondingcontact is in contact with the second bonding contact by the firstcapping layer.

In some embodiments, a second capping layer is formed at an upper end ofthe second bonding contact. The second capping layer can have aconductive material different from a remainder of the second bondingcontact. The first bonding contact can be in contact with the secondbonding contact by the first capping layer and the second capping layerafter the bonding.

In some embodiments, to form the first capping layer, a recess is etchedat the upper end of the first bonding contact, and the conductivematerial is selectively deposited in the recess. Etching of the recessincludes CMP followed by oxide removal, according to some embodiments.The selective deposition of the conductive material includes a pluralitycycles of CVD and plasma treatment.

In some embodiments, the conductive material of the capping layerincludes cobalt, and the remainder of the respective first or secondbonding contact includes copper. In some embodiments, a thickness of thecapping layer is between about 1 nm and about 5 nm. In some embodiments,a width of the first capping layer is greater than a width of the secondbonding contact.

In some embodiments, a first dielectric is formed in the first bondinglayer, a second dielectric is formed in the second bonding layer, andthe first dielectric is in contact with the second dielectric after thebonding.

In some embodiments, the bonding includes hybrid bonding.

The foregoing description of the specific embodiments will so reveal thegeneral nature of the present disclosure that others can, by applyingknowledge within the skill of the art, readily modify and/or adapt forvarious applications such specific embodiments, without undueexperimentation, without departing from the general concept of thepresent disclosure. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the teaching and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the teachings andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections may set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A semiconductor device, comprising: a firstsemiconductor structure comprising a memory array device; a secondsemiconductor structure comprising a peripheral device; and a bondingstructure comprising a first bonding pad, a second bonding pad, and aremainder layer located between and in contact with the first and secondbonding pad in a vertical direction, wherein the first bonding pad islocated between the remainder layer and the first semiconductorstructure in the vertical direction, and the second bonding pad islocated between the remainder layer and the second semiconductorstructure in the vertical direction; and a conductive material of theremainder layer is cobalt metal different from the first and secondbonding pads.
 2. The semiconductor device of claim 1, wherein a width ofa surface of the second bonding pad in contact with the remainder layeris greater than a width of a surface of the first bonding pad in contactwith the remainder layer in a lateral direction.
 3. The semiconductordevice of claim 2, wherein a width of the remainder layer is greaterthan or equal to the width of the second bonding pad in contact with theremainder layer in the lateral direction.
 4. The semiconductor device ofclaim 1, wherein the remainder layer comprises a first remainder layerand a second remainder layer that are in contact with each other and areoppositely arranged in the vertical direction; and the first remainderlayer is in contact with the first bonding pad, and the second remainderlayer is in contact with the second bonding pad.
 5. The semiconductordevice of claim 4, wherein a width of the first remainder layer isgreater than or equal to the width of a surface of the first bonding padin contact with the first remainder layer in a lateral direction; awidth of the second remainder layer is greater than or equal to thewidth of a surface of the second bonding pad in contact with the secondremainder layer in the lateral direction; and the width of the secondremainder layer is greater than the width of the first remainder layerin the lateral direction.
 6. The semiconductor device of claim 1,wherein the first or second bonding pad comprises copper.
 7. Thesemiconductor device of claim 1, wherein a thickness of the remainderlayer is between about 1 nm and about 5 nm.
 8. The semiconductor deviceof claim 1, wherein the bonding structure comprises a first dielectriclayer and a second dielectric layer; and the first bonding pad islocated in the first dielectric layer, and the second bonding pad islocated in the second dielectric layer.
 9. The semiconductor device ofclaim 8, wherein a selectivity of the conductive material of theremainder layer is greater on the first or second bonding pad than onthe first or second dielectric layer.
 10. The semiconductor device ofclaim 8, further comprising a first adhesion layer between the firstbonding pad and the first dielectric layer, and a second adhesion layerbetween the second bonding pad and the second dielectric layer.
 11. Thesemiconductor device of claim 1, wherein at least one of the firstbonding pad and the second bonding pad comprises a first end and asecond end which are oppositely arranged in the vertical direction, andthe first end is close to the remainder layer relative to the secondend, and a width of the first end is greater than a width of the secondend in a lateral direction.
 12. A bonded structure, comprising: a firstbonding pad; a second bonding pad; and a remainder layer located betweenand in contact with the first bonding pad and second bonding pad in avertical direction, wherein the first bonding pad includes a firstsurface in contact with the remainder layer and a second surfaceopposite to the first surface in the vertical direction; and a width ofthe first surface is greater than a width of the second surface in alateral direction.
 13. The bonded structure of claim 12, wherein aconductive material of the remainder layer is cobalt metal differentfrom the first and second bonding pads.
 14. The bonded structure ofclaim 12, wherein the first or second bonding pad comprises copper. 15.The bonded structure of claim 12, wherein the second bonding padcomprises a third surface in contact with the remainder layer and afourth surface opposite to the third surface in the vertical direction,and a width of the third surface is greater than the width of the firstsurface in the lateral direction, and a width of the remainder layer isgreater than or equal to the width of the third surface in the lateraldirection.
 16. The bonded structure of claim 15, wherein the width ofthe third surface is greater than a width of the fourth surface in thelateral direction.
 17. The bonded structure of claim 12, wherein theremainder layer comprises a first remainder layer and a second remainderlayer which are in contact with each other and are oppositely arrangedin the vertical direction; the first remainder layer is in contact withthe first bonding pad, and the second remainder layer is in contact withthe second bonding pad; a width of the first remainder layer is greaterthan or equal to the width of a surface of the first bonding pad incontact with the first remainder layer in a lateral direction; a widthof the second remainder layer is greater than or equal to the width of asurface of the second bonding pad in contact with the second remainderlayer in the lateral direction; and the width of the second remainderlayer is greater than the width of the first remainder layer in thelateral direction.
 18. A semiconductor device, comprising: a firstsemiconductor structure comprising a memory array device; a secondsemiconductor structure comprising a peripheral device; and a bondingstructure comprising a first dielectric layer and a first bonding padlocated in the first dielectric layer, a second dielectric layer and asecond bonding pad located in the second dielectric layer, and aremainder layer between the first bonding pad and the second bondingpad, wherein the remainder layer is configured to prevent metal in thefirst bonding pad from diffusing to the second dielectric layer or toprevent metal in the second bonding pad from diffusing to the firstdielectric layer.
 19. The semiconductor device of claim 18, wherein aselectivity of a conductive material of the remainder layer is greateron the first or second bonding pad than on the first or seconddielectric layer.
 20. The semiconductor device of claim 19, wherein theconductive material of the remainder layer is cobalt metal differentfrom the first and second bonding pads.